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Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. 

General Features 

● VDS = -12V,ID = -9A RDS(ON) < 22mΩ @ VGS=-2.5V 

RDS(ON) < 18mΩ @ VGS=-4.5V 

● Advanced trench MOSFET process technology 

● Ultra low on-resistance with low gate charge Application

 ● PWM applications 

● Load switch 

● Battery charge in cellular handset